RRAM variability and its mitigation schemes

Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories. However, critical causes of hardware reliability failures, such as process variation due to their nano-scale structure have gained considerable importance for acceptable memory yields. Such vulnerabilities make it essential to investigate new robust design strategies at the circuit system level. In this paper we have analyzed the RRAM variability phenomenon, its impact and variation tolerant techniques at the circuit level. Finally a variation-monitoring circuit is presented that discerns the reliable memory cells affected by process variability.Peer ReviewedPostprint (author's final draft

Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation

Bio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, which fails to hold below 0.3V because of its vanishing noise margins. This paper examines the minimum-energy operation point of 2T and 3T1D e-DRAM gain cells at the 32-nm technology node with different design points: up-sizing transistors, using high- V th transistors, read/write wordline assists; as well as operating conditions (i.e., temperature). First, the e-DRAM cells are evaluated without considering any process variations. Then, a full-factorial statistical analysis of e-DRAM cells is performed in the presence of threshold voltage variations and the effect of upsizing on mean MEP is reported. Finally, it is shown that the product of the read and write lengths provides a knob to tradeoff energy-efficiency for reliable MEP energy operation.Peer ReviewedPostprint (author's final draft

Statistical lifetime analysis of memristive crossbar matrix

Memristors are considered one of the most favorable emerging device alternatives for future memory technologies. They are attracting great attention recently, due to their high scalability and compatibility with CMOS fabrication process. Alongside their benefits, they also face reliability concerns (e.g. manufacturing variability). In this sense our work analyzes key sources of uncertainties in the operation of the memristive memory and we present an analytic approach to predict the expected lifetime distribution of a memristive crossbar.Postprint (published version

Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm

3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability as technology dimensions are reduced. In this work, we have shown that 22 nm 3T1D memory cells present significant tolerance to high levels of device parameter fluctuation. Moreover, we have observed that when variability is considered the write access transistor becomes a significant detrimental element on the 3T1D cell performance. Furthermore, resizing and temperature control have been presented as some valid strategies in order to mitigate the 3T1D cell variability.Peer ReviewedPostprint (author's final draft

Review on suitable eDRAM configurations for next nano-metric electronics era

We summarize most of our studies focused on the main reliability issues that can threat the gain-cells eDRAM behavior when it is simulated at the nano-metric device range has been collected in this review. So, to outperform their memory cell counterparts, we explored different technological proposals and operational regimes where it can be located. The best memory cell performance is observed for the 3T1D-eDRAM cell when it is based on FinFET devices. Both device variability and SEU appear as key reliability issues for memory cells at sub-22nm technology node.Peer ReviewedPostprint (author's final draft

Mitigation strategies of the variability in 3T1D cell memories scaled beyond 22nm

Best DCIS Paper Award 20123T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability. In this contribution, we have shown that 22nm 3T1D memory cells present significant tolerance to high levels of device parameter fluctuation. Moreover, we have observed that the variability of the write access transistor has turn into the more detrimental device for the 3T1D cell performance. Furthermore, resizing and temperature control have been presented as some strategies to mitigate the cell variability.Peer ReviewedAward-winningPreprin

Strategies to reengage patients lost to follow up in HIV care in high income countries, a scoping review

Background: Despite remarkable achievements in antiretroviral therapy (ART), losses to follow-up (LTFU) might prevent the long-term success of HIV treatment and might delay the achievement of the 90-90-90 objectives. This scoping review is aimed at the description and analysis of the strategies used in high-income countries to reengage LTFU in HIV care, their implementation and impact. Methods: A scoping review was done following Arksey & O'Malley's methodological framework and recommendations from Joanna Briggs Institute. Peer reviewed articles were searched for in Pubmed, Scopus and Web of Science; and grey literature was searched for in Google and other sources of information. Documents were charted according to the information presented on LTFU, the reengagement procedures used in HIV units in high-income countries, published during the last 15 years. In addition, bibliographies of chosen articles were reviewed for additional articles. Results: Twenty-eight documents were finally included, over 80% of them published in the United States later than 2015. Database searches, phone calls and/or mail contacts were the most common strategies used to locate and track LTFU, while motivational interviews and strengths-based techniques were used most often during reengagement visits. Outcomes like tracing activities efficacy, rates of reengagement and viral load reduction were reported as outcome measures. Conclusions: This review shows a recent and growing trend in developing and implementing patient reengagement strategies in HIV care. However, most of these strategies have been implemented in the United States and little information is available for other high-income countries. The procedures used to trace and contact LTFU are similar across reviewed studies, but their impact and sustainability are widely different depending on the country studied

Anti-tumour necrosis factor discontinuation in inflammatory bowel disease patients in remission: study protocol of a prospective, multicentre, randomized clinical trial

Background: Patients with inflammatory bowel disease who achieve remission with anti-tumour necrosis factor (anti-TNF) drugs may have treatment withdrawn due to safety concerns and cost considerations, but there is a lack of prospective, controlled data investigating this strategy. The primary study aim is to compare the rates of clinical remission at 1?year in patients who discontinue anti-TNF treatment versus those who continue treatment. Methods: This is an ongoing, prospective, double-blind, multicentre, randomized, placebo-controlled study in patients with Crohn?s disease or ulcerative colitis who have achieved clinical remission for ?6?months with an anti-TNF treatment and an immunosuppressant. Patients are being randomized 1:1 to discontinue anti-TNF therapy or continue therapy. Randomization stratifies patients by the type of inflammatory bowel disease and drug (infliximab versus adalimumab) at study inclusion. The primary endpoint of the study is sustained clinical remission at 1?year. Other endpoints include endoscopic and radiological activity, patient-reported outcomes (quality of life, work productivity), safety and predictive factors for relapse. The required sample size is 194 patients. In addition to the main analysis (discontinuation versus continuation), subanalyses will include stratification by type of inflammatory bowel disease, phenotype and previous treatment. Biological samples will be obtained to identify factors predictive of relapse after treatment withdrawal. Results: Enrolment began in 2016, and the study is expected to end in 2020. Conclusions: This study will contribute prospective, controlled data on outcomes and predictors of relapse in patients with inflammatory bowel disease after withdrawal of anti-TNF agents following achievement of clinical remission. Clinical trial reference number: EudraCT 2015-001410-1

Semiconductor Science and Technology Paper CMOS compatible manufacturing of a hybrid SET-FET circuit

[EN]This study analyzes feasibility of complementary metal–oxide–semiconductor (CMOS)-compatible manufacturing of a hybrid single electron transistor–field effect transistor (SET-FET) circuit. The fundamental element towards an operating SET at room temperature is a vertical nanopillar (NP) with embedded Si nanodot generated by ion-beam irradiation. The integration process from NPs to contacted SETs is validated by structural characterization. Then, the monolithic fabrication of planar FETs integrated with vertical SETs is presented, and its compatibility with standard CMOS technology is demonstrated. The work includes process optimization, pillar integrity validation, electrical characterization and simulations taking into account parasitic effects. The FET fabrication process is adapted to meet the requirements of the pre-fabricated NPs. Overall, this work establishes the groundwork for the realization of a hybrid SET-FET circuit operating at room temperature.Peer reviewe